KSP43BU دیتاشیت
مشخصات دیتاشیت
|
نام دیتاشیت
|
KSP43BU
|
|
حجم فایل
|
70.016
کیلوبایت
|
|
نوع فایل
|
pdf
|
|
تعداد صفحات
|
8
|
مشخصات فنی
-
RoHS:
true
-
Category:
Triode/MOS Tube/Transistor/Bipolar Transistors - BJT
-
Datasheet:
onsemi KSP43BU
-
Transistor Type:
NPN
-
Operating Temperature:
+150°C@(Tj)
-
Collector Current (Ic):
500mA
-
Power Dissipation (Pd):
625mW
-
Transition Frequency (fT):
50MHz
-
DC Current Gain (hFE@Ic,Vce):
40@30mA,10V
-
Collector Cut-Off Current (Icbo):
100nA
-
Collector-Emitter Breakdown Voltage (Vceo):
200V
-
Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib):
500mV@20mA,2mA
-
Package:
TO-92-3
-
Manufacturer:
onsemi
-
Series:
-
-
Packaging:
Bulk
-
Part Status:
Active
-
Current - Collector (Ic) (Max):
500mA
-
Voltage - Collector Emitter Breakdown (Max):
200V
-
Vce Saturation (Max) @ Ib, Ic:
500mV @ 2mA, 20mA
-
Current - Collector Cutoff (Max):
100nA (ICBO)
-
DC Current Gain (hFE) (Min) @ Ic, Vce:
40 @ 30mA, 10V
-
Power - Max:
625mW
-
Frequency - Transition:
50MHz
-
Mounting Type:
Through Hole
-
Package / Case:
TO-226-3, TO-92-3 (TO-226AA)
-
Supplier Device Package:
TO-92-3
-
Base Part Number:
KSP43
-
detail:
Bipolar (BJT) Transistor NPN 200V 500mA 50MHz 625mW Through Hole TO-92-3
